Distributions of random fields in solids: contribution of the nearest defect

This paper discusses the statistical distribution of internal fields due to random defects in solids. It extends previous discussions by separating explicitly the contribution of the nearest defect from that due to all others. Possible applications include those to preferential defect pairing, to hopping conduction in randomly doped crystals, and to questions of the existence of phase transitions in random dipole systems. As a by-product. we note that the random strains in solids have a statistically negligible probability of localising a muon (assumed not self-trapped) except at the sites of defects themselves.